Examples of advanced machine features include: optimal fracturing of complex curved layouts, flexible control of field placement and shot placement, writing order definition and control, compensation for tool artifacts by intelligent multi-pass, and powerful data compaction.īEAMER provides innovative tools for PEC and advanced process correction for nanoscale electron-beam lithography. The machine formats are continuously enhanced in strong cooperation with the machine vendors, to provide the best possible exposure results. The integrated Layout Editor allows the creation and /or modification of layouts. VIEWER is also available as a stand-alone software package.īEAMER includes Import /Export for all major layout and machine formats, without size limitations. The integrated VIEWER provides layout inspection at all stages, comparing layouts in multi-view mode, measurement functions, metrology support, writing field placement, dose assignment, and shot placement. User Libraries allow storage and easy re-use of common blocks of modules for often-used functions. The VisualFLOW™ user interface allows fast process flow creation by simple drag & drop to connect functional modules, providing increased productivity and efficiency.Ī comprehensive library of modules is available for building powerful flows. BEAMER is designed for the industrial user focused on productivity, as well as universities and R & D centers interested in flexibility and high resolution lithography. Strong collaboration with leading nanofabrication centers worldwide drives rapid enhancements and allows us to provide the most advanced capabilities to our users, improving their efficiency and effectiveness. Performing traditional “Trial & Error” optimizations is very expensive and time consuming.Īdvanced techniques available include: “model-based undersize-overdose” enabling ultra-high resolution in difficult scenarios, 3D PEC for three dimensional resist profiles in single and multi-layer resists, and full process calibration with simulation for quick development of new innovative solutions. Additionally, PEC eliminates the need to experimentally adjust the exposure dose for each layout thereby increasing productivity and process reproducibility. PEC is essential for improving the exposure quality by automatically adjusting exposure doses for optimum CD (critical dimension) uniformity and contrast. Applying techniques such as “bulk & sleeve” or “coarse & fine” combined with proximity effect correction (PEC) to easily and effectively achieve high resolution, smooth edges at increased throughput. The user can instantly visualize and quickly optimize the exposure process, including field and shot position. Examples include: optimized fracturing for a significant reduction in shot placement artifacts, automated floating field to avoid /reduce field placement and stitching issues, user controlled field placement, and enhanced multi pass Interfaces for all major electron and laser-beam exposure tools are developed in close cooperation with machine vendors and are continuously optimized for the best exposure results, thereby extending the limits of these systems by advanced data preparation. It gives the user a large array of functions for extracting, combining and modifying the layout for an optimum exposure.
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